Title:
GALLIUM NITRIDE-BASED SINTERED COMPACT AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2016/158651
Kind Code:
A1
Abstract:
The purpose of the present invention is to manufacture a sputtering target for a gallium nitride thin film having low oxygen content, high density, and low resistance. Using a gallium nitride powder having the powder properties of low oxygen content and high bulk density, a gallium nitride sintered compact having low oxygen content, high density, and low resistance can be fabricated by carrying out hot pressing in a high vacuum at high temperature.
Inventors:
MESUDA MASAMI (JP)
KURAMOCHI HIDETO (JP)
KURAMOCHI HIDETO (JP)
Application Number:
PCT/JP2016/059341
Publication Date:
October 06, 2016
Filing Date:
March 24, 2016
Export Citation:
Assignee:
TOSOH CORP (JP)
International Classes:
C23C14/34; C04B35/58; C30B29/38
Foreign References:
| JP2006290729A | 2006-10-26 | |||
| JP2012144805A | 2012-08-02 | |||
| JP2013129568A | 2013-07-04 |
Other References:
See also references of EP 3279367A4
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