Title:
GALLIUM NITRIDE NANO-SUPERSTRUCTURE, PREPARATION METHODS THEREFOR AND GALLIUM NITRIDE-BASED LASER
Document Type and Number:
WIPO Patent Application WO/2023/130794
Kind Code:
A1
Abstract:
A gallium nitride nano-superstructure (B), preparation methods therefor, and a gallium nitride-based laser provided with the gallium nitride nano-superstructure (B), the gallium nitride nano-superstructure (B) being used for realizing emission of circularly polarized light from the gallium nitride-based laser. The gallium nitride nano-superstructure (B) comprises, sequentially from bottom to top, a substrate (10), a dielectric film layer (20) and a nanograting structure layer (30), a grating material of the nanograting structure layer (30) comprising one of gallium nitride, n-type gallium nitride and p-type gallium nitride, the grating period range being 100 nm - 280 nm, the grating height range being 100 nm - 300 nm, and the grating line width being 50 nm - 200 nm. The gallium nitride nano-superstructure (B) can realize an efficient emission function of circularly polarized light, and when applied to a gallium nitride-based laser, can realize emission of circularly polarized light from the gallium nitride-based laser.
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Inventors:
WANG MIAO (CN)
YI JUEMIN (CN)
WANG JIANFENG (CN)
XU KE (CN)
YI JUEMIN (CN)
WANG JIANFENG (CN)
XU KE (CN)
Application Number:
PCT/CN2022/125543
Publication Date:
July 13, 2023
Filing Date:
October 17, 2022
Export Citation:
Assignee:
SUZHOU INST NANO TECH & NANO BIONICS SINANO CAS (CN)
International Classes:
H01S5/00; G02B5/30
Foreign References:
| CN114509838A | 2022-05-17 | |||
| US20210050494A1 | 2021-02-18 | |||
| CN112018221A | 2020-12-01 | |||
| CN103383980A | 2013-11-06 | |||
| US20090116527A1 | 2009-05-07 | |||
| CN102142487A | 2011-08-03 | |||
| CN202210009700A | 2022-01-05 |
Attorney, Agent or Firm:
SUZHOU 3IN INTELLECTUAL PROPERTY AGENT CO., LTD. (CN)
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