Title:
GALLIUM NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2013/001856
Kind Code:
A1
Abstract:
Provided are: a gallium nitride semiconductor laser element which has reduced threshold current; and a method for manufacturing a gallium nitride semiconductor laser element. This gallium nitride semiconductor laser element is provided with an n-type cladding layer (15b), an n-side light guide layer (29), an active layer (27), a p-side light guide layer (31) and a p-type cladding layer (23). The oscillation wavelength of the active layer (27) is from 400 nm to 550 nm (inclusive). The n-type cladding layer (15b) is formed of InxAlyGa1-x-yN (0 < x < 0.05, 0 < y < 0.20); and the p-type cladding layer (23) is formed of InxAlyGa1-x-yN (0 ≤ x < 0.05, 0 < y < 0.20). Both of the n-side light guide layer (29) and the p-side light guide layer (31) contain indium, and the indium compositions of the n-side light guide layer (29) and the p-side light guide layer (31) are from 2% to 6% (inclusive). The film thickness of the n-type cladding layer (15b) is within the range from 65% to 85% (inclusive) of the total of the film thickness of the n-type cladding layer (15b) and the film thickness of the p-type cladding layer (23).
Inventors:
KUMANO TETSUYA (JP)
UENO MASAKI (JP)
KYONO TAKASHI (JP)
ENYA YOHEI (JP)
YANASHIMA KATSUNORI (JP)
TASAI KUNIHIKO (JP)
NAKAJIMA HIROSHI (JP)
UENO MASAKI (JP)
KYONO TAKASHI (JP)
ENYA YOHEI (JP)
YANASHIMA KATSUNORI (JP)
TASAI KUNIHIKO (JP)
NAKAJIMA HIROSHI (JP)
Application Number:
PCT/JP2012/055718
Publication Date:
January 03, 2013
Filing Date:
March 06, 2012
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
SONY CORP (JP)
KUMANO TETSUYA (JP)
UENO MASAKI (JP)
KYONO TAKASHI (JP)
ENYA YOHEI (JP)
YANASHIMA KATSUNORI (JP)
TASAI KUNIHIKO (JP)
NAKAJIMA HIROSHI (JP)
SONY CORP (JP)
KUMANO TETSUYA (JP)
UENO MASAKI (JP)
KYONO TAKASHI (JP)
ENYA YOHEI (JP)
YANASHIMA KATSUNORI (JP)
TASAI KUNIHIKO (JP)
NAKAJIMA HIROSHI (JP)
International Classes:
H01S5/20; H01S5/343
Foreign References:
| JP2011077401A | 2011-04-14 | |||
| JP2010129676A | 2010-06-10 | |||
| JP2008053760A | 2008-03-06 | |||
| JP2010135724A | 2010-06-17 | |||
| JP2011077395A | 2011-04-14 | |||
| JP2006173621A | 2006-06-29 | |||
| JP2010129676A | 2010-06-10 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
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Claims: