Title:
GALLIUM OXIDE SUBSTRATE, AND GALLIUM OXIDE SUBSTRATE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2020/209022
Kind Code:
A1
Abstract:
This gallium oxide substrate has a first main surface and a second main surface oriented facing away from the first main surface. With the reference plane being the least square plane of the first main surface, if the high-low difference measurement data z0(r, θ) for the first main surface is approximated by z(r, θ) from formula (1) of the specification, then: when the second main surface is oriented to be face-to-face with a horizontal flat surface and disposed thereon, a first largest high-low difference (PV1) for a component yielded by adding all the anmznm(r, θ) values wherefor j is 4, 9, 16, 25, 36, 49, 64, and 81, divided by the first main surface diameter (D), gives a value (PV1/D) of 0.39 × 10-4 or lower; and when the second main surface is oriented to be face-to-face with a flat chuck surface and the entire surface thereof is adsorbed thereon, a second largest high-low difference (PV2) for a component yielded by adding all the anmznm(r, θ) values wherefor j is 4 to 81, divided by the first main surface diameter (D), gives a value (PV2/D) of 0.59 × 10-4 or less.
Inventors:
HIRABAYASHI YUSUKE (JP)
Application Number:
PCT/JP2020/011995
Publication Date:
October 15, 2020
Filing Date:
March 18, 2020
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
C30B29/16; H01L21/304
Domestic Patent References:
| WO2019188747A1 | 2019-10-03 |
Foreign References:
| JP2014024960A | 2014-02-06 | |||
| JP2008105883A | 2008-05-08 | |||
| JP2016013932A | 2016-01-28 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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