Title:
GAN BASE LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR USING MECHANICAL POST-PROCESSING
Document Type and Number:
WIPO Patent Application WO/2015/016602
Kind Code:
A1
Abstract:
A GaN base light-emitting diode and a manufacturing method therefor using mechanical post-processing are disclosed. A GaN base light-emitting diode according to one embodiment comprises: a first electrode, a second electrode and a flexible substrate, which are sequentially laminated; an n-GaN layer, an active layer and a p-GaN layer, which are provided between the first electrode and the second electrode and form a core-shell structure; and a buried layer provided between the flexible substrate and the first electrode. The first electrode and the core-shell structure are buried in the buried layer. The manufacturing method comprises a process of decreasing adhesion between interfaces of a first GaN layer and a metal layer through a high-temperature process for forming the n-GaN layer and a process for attaching tape to an upper electrode and then mechanically detaching the tape, and then separating the metal layer so as to transfer an LED to the flexible substrate.
Inventors:
CHOI JUNHEE (KR)
KIM SANGWON (KR)
AHN HOYOUNG (KR)
LEE EUNHONG (KR)
KIM SANGWON (KR)
AHN HOYOUNG (KR)
LEE EUNHONG (KR)
Application Number:
PCT/KR2014/006987
Publication Date:
February 05, 2015
Filing Date:
July 30, 2014
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD (KR)
International Classes:
H01L33/20; H01L33/04; H01L33/32
Foreign References:
| JP2003031841A | 2003-01-31 | |||
| JP2012060165A | 2012-03-22 | |||
| KR100755610B1 | 2007-09-06 | |||
| US20060060833A1 | 2006-03-23 | |||
| JP2003168762A | 2003-06-13 |
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
리앤목 특허법인 (KR)
리앤목 특허법인 (KR)
Download PDF: