Title:
GAS BARRIER FILM MATERIAL, SILICON OXIDE FILM, AND PRODUCTION METHOD OF SILICON OXIDE FILM
Document Type and Number:
WIPO Patent Application WO/2024/014503
Kind Code:
A1
Abstract:
Provided is a gas barrier film material comprising an organic silane compound represented by general formula (1). Formula (1): SiR1 (4-a-b)R2 aR3 b [In the formula, R1 represents a phenyl group, a benzyl group, or an alkyl group having 1-10 carbon atoms, R2 represents an alkenyl group having 2-10 carbon atoms or an alkynyl group having 2-10 carbon atoms, R3 represents an alkoxy group having 1-10 carbon atoms or a hydroxyl group, a is an integer of 1-4, and b is an integer of 0-3, with the caveat that if multiple R1, R2, or R3 groups are present, said groups may be the same or different from one another.]
Inventors:
CHIBA HIROKAZU (JP)
Application Number:
PCT/JP2023/025859
Publication Date:
January 18, 2024
Filing Date:
July 13, 2023
Export Citation:
Assignee:
TOSOH CORP (JP)
International Classes:
C23C16/42; B32B7/022; B32B9/00; C07F7/18; H01L21/316
Domestic Patent References:
| WO2015029732A1 | 2015-03-05 | |||
| WO2020209202A1 | 2020-10-15 |
Foreign References:
| JP2012076385A | 2012-04-19 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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