Title:
GATE DRIVE CIRCUIT, POWER-GOOD CIRCUIT, OVERCURRENT SENSING CIRCUIT, OSCILLATION PREVENTION CIRCUIT, SWITCHING CONTROL CIRCUIT AND SWITCHING POWER SUPPLY DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/219031
Kind Code:
A1
Abstract:
The present invention is configured in a manner such that: a high-side pre-driver (21) has a first high-side transistor (HPM1) and a second high-side transistor (HPM2); a low-side pre-driver (22) has a third high-side transistor (LPM1) and a fourth high-side transistor (LPM2); and a delay is provided between a first gate signal (pgHS1) for turning the first high-side transistor on and a second gate signal (pgHS2) for turning the second high-side transistor on, and/or between a third gate signal (pgLS1) for turning the third high-side transistor on and a fourth gate signal (pgLS2) for turning the fourth high-side transistor on.
Inventors:
YAMAKOSHI HARUO (JP)
SAKAWA NAOYUKI (JP)
OSHIMI TOMOAKI (JP)
SAKAWA NAOYUKI (JP)
OSHIMI TOMOAKI (JP)
Application Number:
PCT/JP2023/017044
Publication Date:
November 16, 2023
Filing Date:
May 01, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H03K17/16; G05F1/10; H02M1/00; H02M1/08; H02M3/135; H02M3/155; H03F3/45; H03K17/22; H03K17/693
Foreign References:
| JP2005294464A | 2005-10-20 | |||
| JP2021150532A | 2021-09-27 |
Attorney, Agent or Firm:
SANO PATENT OFFICE (JP)
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