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Title:
GRAPHENE TRANSISTOR AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2020/170799
Kind Code:
A1
Abstract:
Provided is a graphene transistor which includes at least one graphene layer comprising graphene, a drain electrode and a source electrode that are electrically connected to the graphene layer, and a charge donor that includes impurity charge and is present on at least one main face of the graphene layer, the graphene transistor further including counter ions which are ions having a charge with a sign different from that of the impurity charge.

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Inventors:
MIYAKAWA NARUTO (JP)
SHINAGAWA AYUMI (JP)
USHIBA SHOTA (JP)
KIMURA MASAHIKO (JP)
MATSUMOTO KAZUHIKO (JP)
ONO TAKAO (JP)
Application Number:
PCT/JP2020/004066
Publication Date:
August 27, 2020
Filing Date:
February 04, 2020
Export Citation:
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Assignee:
MURATA MANUFACTURING CO (JP)
UNIV OSAKA (JP)
International Classes:
H01L51/30; G01N27/414; H01L29/16; H01L29/66; H01L29/786; H01L51/05; H01L51/40
Foreign References:
US20150270350A12015-09-24
US20160111180A12016-04-21
JP2012248842A2012-12-13
KR20120034349A2012-04-12
US20170323945A12017-11-09
US20110095268A12011-04-28
JP2012247189A2012-12-13
JP2018163146A2018-10-18
Other References:
See also references of EP 3905353A4
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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