Title:
GROUP-III NITRIDE SEMICONDUCTOR LASER ELEMENT, METHOD FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LASER ELEMENT, METHOD FOR EVALUATING END SURFACE FOR OPTICAL RESONATOR OF GROUP-III NITRIDE SEMICONDUCTOR LASER ELEMENT, AND METHOD FOR EVALUATING SCRIBE GROOVE
Document Type and Number:
WIPO Patent Application WO/2014/061328
Kind Code:
A1
Abstract:
A group-III nitride semiconductor laser having a laser resonator that enables a reduction in disturbance due to return light on a semipolar surface of a substrate in which the c-axis of a group-III nitride is inclined in the direction of an m-axis, wherein when the angle (ALPHA) is in the range of 71-79 degrees inclusive, the angle (α1) is in the range of 10-25 degrees inclusive, and the angle (β1) is in the range of 0-5 degrees inclusive. At a first end surface in the vicinity of a first surface closer to an epi-surface, the angle formed by a first normal vector (ENV1) and a c+ axis vector (VC+) within an m-n plane has a value close to the angle (α1) (for example, in the range of 10-25 degrees inclusive). At the first end surface in the vicinity of the back surface of the substrate, the angle formed by a second normal vector (ENV2) and the c+ axis vector (VC+) within the m-n plane has a value close to the angle (β1) (for example, in the range of 0-5 degrees inclusive).
Inventors:
TAKAGI SHIMPEI (JP)
Application Number:
PCT/JP2013/070050
Publication Date:
April 24, 2014
Filing Date:
July 24, 2013
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01S5/343; G01B11/26; H01L21/301; H01S5/02
Domestic Patent References:
| WO2012099221A1 | 2012-07-26 | |||
| WO2011077856A1 | 2011-06-30 |
Foreign References:
| JP4475357B1 | 2010-06-09 | |||
| JP2012124273A | 2012-06-28 | |||
| JP2009081336A | 2009-04-16 | |||
| JP2011082459A | 2011-04-21 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
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