Title:
HARD MASK, SUBSTRATE PROCESSING METHOD, AND REMOVAL METHOD FOR HARD MASK
Document Type and Number:
WIPO Patent Application WO/2023/166987
Kind Code:
A1
Abstract:
This hard mask is for use in etching of an object to be processed, and includes: an oxide containing at least one of gallium, indium, and zinc. The hard mask which includes an oxide containing at least one of gallium, indium, and zinc, is formed on a substrate having an object to be processed, and is etched into a desired pattern, and the object to be processed is etched using the hard mask as a mask.
Inventors:
LI XIAOLONG (JP)
MAEHARA HIROKI (JP)
ISHIBASHI SHOTA (JP)
KITADA TORU (JP)
MAEHARA HIROKI (JP)
ISHIBASHI SHOTA (JP)
KITADA TORU (JP)
Application Number:
PCT/JP2023/005159
Publication Date:
September 07, 2023
Filing Date:
February 15, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Domestic Patent References:
| WO2020223152A1 | 2020-11-05 |
Foreign References:
| US20180294163A1 | 2018-10-11 | |||
| JP2008078174A | 2008-04-03 | |||
| JP2012186383A | 2012-09-27 |
Attorney, Agent or Firm:
TAKAYAMA Hiroshi (JP)
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