HEAT TREATMENT JIG FOR SEMICONDUCTOR SILICON SUBSTRATE

WIPO Patent Application WO/2005/124839

A1

A heat treatment jig for a semiconductor silicon substrate making contact with a semiconductor silicon substrate to hold the substrate is to be mounted on a heat treatment boat in a vertical heat treatment furnace. The jig has a ring structure or a disc structure, with a thickness of 1.5mm or more but not more than 6.0mm and a flexure displacement quantity of 100μm or less in an area making contact with the semiconductor silicon substrate when mounted on the heat treatment boat. An outer diameter of the jig making contact with the semiconductor silicon substrate to hold the substrate is 65% or more of a diameter of the semiconductor silicon substrate, a surface roughness (Ra value) of a plane making contact with the semiconductor silicon substrate is 1.0μm or more but not more than 100μm. The heat treatment jig effectively reduces slipping, and at the same time, prevents growth suppression of a thermally oxidized film on a substrate rear plane, and eliminates a front plane step, which causes defocusing in a photolithography process in device manufacture. Thus, a high quality of the semiconductor silicon substrate can be maintained and device yield can be remarkably improved.

JPS5358911	TRANSPORTATION APPARATUS OF HEATING MATERIALS AT HEATING FURNACE
WO/2014/057002	WORKPIECE SUPPORT

ADACHI NAOSHI (JP)

PCT/JP2005/011137

December 29, 2005

June 17, 2005

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SUMCO CORP (JP)
ADACHI NAOSHI (JP)

F27D5/00; H01L21/22; H01L21/31; H01L21/324; H01L21/673; H01L21/68; (IPC1-7): H01L21/22; H01L21/31; H01L21/324; H01L21/68

JP2004134761A	2004-04-30
JP2003249458A	2003-09-05

See also references of EP 1780774A4
None

Mori, Michio (Amagasaki Building 17-23, Higashinaniwa-cho 5-chom, Amagasaki-shi Hyogo 92, JP)

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