Title:
HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/039148
Kind Code:
A1
Abstract:
A semiconductor wafer having a hemicellulose film impregnated with a metal on the surface thereof is housed in a chamber and supported by a stage. The hemicellulose film is preheated at 200°C or lower by the stage, and then heated to a temperature higher than 200°C for 1 second or less by irradiation with flash light from a flash lamp. Hemicellulose thermally decomposes at 200°C or higher. However, since the time for heating the hemicellulose film to a temperature higher than 200°C is 1 second or less which is extremely short, thermal decomposition of the hemicellulose film can be prevented. In addition, by heating the hemicellulose film to a temperature higher than 200°C, the metal can be diffused into the film to sufficiently cure the hemicellulose film.
Inventors:
KAWARAZAKI HIKARU (JP)
TANIMURA HIDEAKI (JP)
KATO SHINICHI (JP)
TANIMURA HIDEAKI (JP)
KATO SHINICHI (JP)
Application Number:
PCT/JP2020/026974
Publication Date:
March 04, 2021
Filing Date:
July 10, 2020
Export Citation:
Assignee:
SCREEN HOLDINGS CO LTD (JP)
International Classes:
H01L21/027; H01L21/3065; H01L21/312; H01L21/314
Domestic Patent References:
| WO2006022312A1 | 2006-03-02 |
Foreign References:
| JP2013069990A | 2013-04-18 | |||
| JPH04273430A | 1992-09-29 | |||
| JP2005135957A | 2005-05-26 | |||
| US20190259606A1 | 2019-08-22 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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