Title:
HEAT TREATMENT METHOD
Document Type and Number:
WIPO Patent Application WO/2015/079621
Kind Code:
A1
Abstract:
The present invention is a heat treatment method wherein a plurality of semiconductor wafers are mounted horizontally upon a support member that is coated with SiC and wherein high-temperature heat treatment is performed inside a vertical heat treatment furnace. The heat treatment method is characterized by heat treatment wherein the support member and the conditions of heat treatment are switched such that the support member is continuously subjected over a fixed period of time to a high-temperature heat treatment under either first conditions or second conditions and then continuously subjected over a fixed period of time to a high-temperature heat treatment under the other conditions. Under the first high-temperature heat treatment conditions, heat treatment is performed at a temperature of 1000℃ or more in an atmosphere that contains a noble gas and does not contain oxygen. Under the second high-temperature heat treatment conditions, heat treatment is performed at a temperature of 1000℃ or more in an atmosphere that contains oxygen and does not contain a noble gas. The present invention can thereby suppress the occurrence of slip dislocations.
Inventors:
KATO MASAHIRO (JP)
Application Number:
PCT/JP2014/005417
Publication Date:
June 04, 2015
Filing Date:
October 27, 2014
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/324; H01L21/22; H01L21/677
Domestic Patent References:
| WO2009128225A1 | 2009-10-22 |
Foreign References:
| JP2004241545A | 2004-08-26 | |||
| JP2002324830A | 2002-11-08 | |||
| JPH1092757A | 1998-04-10 | |||
| JP2008277781A | 2008-11-13 | |||
| JP2002274983A | 2002-09-25 | |||
| JP2010283153A | 2010-12-16 | |||
| JP2004241545A | 2004-08-26 | |||
| JP2005101161A | 2005-04-14 |
Other References:
See also references of EP 3035373A4
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)
Good Miya Mikio (JP)
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