Title:
HEAT TREATMENT METHOD
Document Type and Number:
WIPO Patent Application WO/2021/171935
Kind Code:
A1
Abstract:
In the present invention, the temperature of a semiconductor wafer is increased to a first preliminary heating temperature by means of optical irradiation from a halogen lamp, and a silicon oxide film is formed on the surface of the semiconductor wafer by irradiating the semiconductor wafer with flash light in an oxidizing atmosphere that includes oxygen. Next, the temperature of the semiconductor wafer is temporarily lowered, after which the temperature of the semiconductor wafer is again increased to a second preliminary heating temperature by means of the optical irradiation from the halogen lamp, and the silicon oxide film on the surface of the semiconductor wafer is nitrided by irradiating the semiconductor wafer with flash light in a nitriding atmosphere that includes ammonia. The silicon oxide film can be formed by heating the surface of the semiconductor wafer for no more than one second by means of the irradiation of flash light having a very short irradiation time, and a high-quality and thin silicon oxynitride film can be formed because the silicon oxide film is nitrided.
Inventors:
FUSE KAZUHIKO (JP)
Application Number:
PCT/JP2021/003836
Publication Date:
September 02, 2021
Filing Date:
February 03, 2021
Export Citation:
Assignee:
SCREEN HOLDINGS CO LTD (JP)
International Classes:
H01L21/26; H01L21/31; H01L21/318
Foreign References:
| JP2005019650A | 2005-01-20 | |||
| JP2012191110A | 2012-10-04 | |||
| JP2017045982A | 2017-03-02 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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