Title:
HETEROJUNCTION FIELD EFFECT TRANSISTOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/241905
Kind Code:
A1
Abstract:
Provided are a heterojunction field effect transistor and a preparation method therefor. The preparation method comprises the following steps: providing a substrate (S01); preparing an AlGaN/GaN heteroepitaxial layer on the substrate (S02); preparing a source electrode and a drain electrode on the AlGaN/GaN heteroepitaxial layer (S03); and depositing a p-type oxide on the AlGaN/GaN heteroepitaxial layer by means of a magnetron sputtering method to obtain a p-type oxide grid electrode (S04). The preparation method has a simple process, so that a p-type oxide can be prevented from being polluted, a p-type oxide grid electrode with a higher concentration can also be prepared, the capability of positive regulation of a threshold voltage of a GaN-based heterojunction field effect transistor can also be ensured, and finally the device power of the heterojunction field effect transistor is remarkably improved.
Inventors:
LIU XINKE (CN)
WANG LEI (CN)
AO JINPING (CN)
WANG LEI (CN)
AO JINPING (CN)
Application Number:
PCT/CN2018/091797
Publication Date:
December 26, 2019
Filing Date:
June 19, 2018
Export Citation:
Assignee:
UNIV SHENZHEN (CN)
International Classes:
H01L29/778
Foreign References:
| CN106298887A | 2017-01-04 | |||
| CN206441733U | 2017-08-25 | |||
| US20090057720A1 | 2009-03-05 | |||
| CN108807509A | 2018-11-13 | |||
| CN208422921U | 2019-01-22 | |||
| CN102945860A | 2013-02-27 |
Attorney, Agent or Firm:
HENSEN INTELLECTUAL PROPERTY FIRM (CN)
Download PDF:
Previous Patent: SELECTIVE SIGNATURE FOR MULTIPLE ACCESS SYSTEMS
Next Patent: AUTOMATIC SORTING SYSTEM AND SORTING ROBOT
Next Patent: AUTOMATIC SORTING SYSTEM AND SORTING ROBOT