Title:
HIGH DIELECTRIC HYDROCARBON THIN FILM, AND SEMICONDUCTOR DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2021/261867
Kind Code:
A1
Abstract:
A semiconductor device, according to the technical idea of the present invention, comprises: a substrate defining an active region; a gate dielectric film disposed on the active region; a gate electrode disposed on the gate dielectric film; source/drain regions disposed on active regions on both sides of the gate electrode; contact structures electrically connected to the source/drain regions; and ultra-thin film insertion layers formed on the interfaces between the source/drain regions and the contact structures, wherein the ultra-thin film insertion layers include high dielectric hydrocarbon thin films.
Inventors:
LEE ZONG HOON (KR)
KIM EUI TAE (KR)
JEONG HONG SIK (KR)
SUH JOON KI (KR)
LIM DONG HYEOK (KR)
LEE SUK WOO (KR)
KIM EUI TAE (KR)
JEONG HONG SIK (KR)
SUH JOON KI (KR)
LIM DONG HYEOK (KR)
LEE SUK WOO (KR)
Application Number:
PCT/KR2021/007769
Publication Date:
December 30, 2021
Filing Date:
June 21, 2021
Export Citation:
Assignee:
ULSAN NAT INST SCIENCE & TECH UNIST (KR)
IAC IN NAT UNIV CHUNGNAM (KR)
IAC IN NAT UNIV CHUNGNAM (KR)
International Classes:
H01L21/02; C23C16/26; C23C16/50; C23C16/52; H01L21/768; H01L21/8238
Domestic Patent References:
| WO2021261866A1 | 2021-12-30 |
Foreign References:
| KR20010087189A | 2001-09-15 | |||
| KR20030002993A | 2003-01-09 | |||
| JP2015050434A | 2015-03-16 | |||
| KR20170091434A | 2017-08-09 | |||
| JP2015142078A | 2015-08-03 |
Other References:
KIM DONG-OK; HONG HYO-KI; SEO DONG-BUM; TRUNG TRAN NAM; HWANG CHAN-CUK; LEE ZONGHOON; KIM EUI-TAE: "Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices", CARBON, ELSEVIER OXFORD, GB, vol. 158, 7 November 2019 (2019-11-07), GB , pages 513 - 518, XP086014599, ISSN: 0008-6223, DOI: 10.1016/j.carbon.2019.11.019
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
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