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Title:
CAPACITOR USING HIGH DIELECTRIC HYDROCARBON THIN FILM AND SEMICONDUCTOR DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2021/261868
Kind Code:
A1
Abstract:
A semiconductor device according to the technical idea of the present invention comprises: a substrate in which an active region is defined; a gate dielectric layer disposed on the active region; a gate electrode disposed on the gate dielectric layer; a source/drain region disposed in the active region at both sides of the gate electrode; a contact structure connected to the source/drain region; and a capacitor connected to the contact structure, wherein: the capacitor comprises a lower electrode, a capacitor dielectric layer, and an upper electrode; and the capacitor dielectric layer comprises a high dielectric hydrocarbon thin film.

Inventors:
LEE ZONG HOON (KR)
KIM EUI TAE (KR)
JEONG HONG SIK (KR)
SUH JOON KI (KR)
LIM DONG HYEOK (KR)
LEE SUK WOO (KR)
Application Number:
PCT/KR2021/007770
Publication Date:
December 30, 2021
Filing Date:
June 21, 2021
Export Citation:
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Assignee:
ULSAN NAT INST SCIENCE & TECH UNIST (KR)
IAC IN NAT UNIV CHUNGNAM (KR)
International Classes:
H01L21/02; C23C16/22; C23C16/50; C23C16/52; H01L27/108; H01L49/02
Domestic Patent References:
WO2021261866A12021-12-30
WO2021261867A12021-12-30
Foreign References:
KR20010087189A2001-09-15
KR20030002993A2003-01-09
KR20040051069A2004-06-18
KR100960759B12010-06-01
JP2012506151A2012-03-08
Other References:
KIM DONG-OK; HONG HYO-KI; SEO DONG-BUM; TRUNG TRAN NAM; HWANG CHAN-CUK; LEE ZONGHOON; KIM EUI-TAE: "Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices", CARBON, ELSEVIER OXFORD, GB, vol. 158, 7 November 2019 (2019-11-07), GB , pages 513 - 518, XP086014599, ISSN: 0008-6223, DOI: 10.1016/j.carbon.2019.11.019
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
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