Title:
CAPACITOR USING HIGH DIELECTRIC HYDROCARBON THIN FILM AND SEMICONDUCTOR DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2021/261868
Kind Code:
A1
Abstract:
A semiconductor device according to the technical idea of the present invention comprises: a substrate in which an active region is defined; a gate dielectric layer disposed on the active region; a gate electrode disposed on the gate dielectric layer; a source/drain region disposed in the active region at both sides of the gate electrode; a contact structure connected to the source/drain region; and a capacitor connected to the contact structure, wherein: the capacitor comprises a lower electrode, a capacitor dielectric layer, and an upper electrode; and the capacitor dielectric layer comprises a high dielectric hydrocarbon thin film.
Inventors:
LEE ZONG HOON (KR)
KIM EUI TAE (KR)
JEONG HONG SIK (KR)
SUH JOON KI (KR)
LIM DONG HYEOK (KR)
LEE SUK WOO (KR)
KIM EUI TAE (KR)
JEONG HONG SIK (KR)
SUH JOON KI (KR)
LIM DONG HYEOK (KR)
LEE SUK WOO (KR)
Application Number:
PCT/KR2021/007770
Publication Date:
December 30, 2021
Filing Date:
June 21, 2021
Export Citation:
Assignee:
ULSAN NAT INST SCIENCE & TECH UNIST (KR)
IAC IN NAT UNIV CHUNGNAM (KR)
IAC IN NAT UNIV CHUNGNAM (KR)
International Classes:
H01L21/02; C23C16/22; C23C16/50; C23C16/52; H01L27/108; H01L49/02
Domestic Patent References:
WO2021261866A1 | 2021-12-30 | |||
WO2021261867A1 | 2021-12-30 |
Foreign References:
KR20010087189A | 2001-09-15 | |||
KR20030002993A | 2003-01-09 | |||
KR20040051069A | 2004-06-18 | |||
KR100960759B1 | 2010-06-01 | |||
JP2012506151A | 2012-03-08 |
Other References:
KIM DONG-OK; HONG HYO-KI; SEO DONG-BUM; TRUNG TRAN NAM; HWANG CHAN-CUK; LEE ZONGHOON; KIM EUI-TAE: "Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices", CARBON, ELSEVIER OXFORD, GB, vol. 158, 7 November 2019 (2019-11-07), GB , pages 513 - 518, XP086014599, ISSN: 0008-6223, DOI: 10.1016/j.carbon.2019.11.019
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
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