HIGH-FREQUENCY AMPLIFIER, RADIO COMMUNICATION DEVICE, AND RADAR DEVICE

Title:

HIGH-FREQUENCY AMPLIFIER, RADIO COMMUNICATION DEVICE, AND RADAR DEVICE

Document Type and Number:

WIPO Patent Application WO/2021/199431

Kind Code:

A1

Abstract:

A high-frequency amplifier (1) is provided with: a source ground transistor (12) which includes gate fingers (14-1) to (14-8), drain fingers (15-1) to (15-4), and source fingers (16-1) to (16-5), which amplifies signals to be amplified, imparted to each gate finger (14-m) (m=1, 2, ..., 8), and which outputs the amplified signals from each of the drain fingers (15-j) (j=1, 2, 3, 4); and a gate ground transistor (32) which includes source fingers (33-1) to (33-8) connected to the drain fingers (15-1) to (15-4) of the source ground transistor (12), drain fingers (34-1) to (34-4), and gate fingers (35-1) to (35-8), and which amplifies the amplified signals output from each of the drain fingers (15-j) of the source ground transistor (12). Further, the high-frequency amplifier (1) is provided with: a gate bus bar (38) connected to the gate fingers (35-1) to (35-8) of the gate ground transistor (32); and capacitors (39-1) to (39-8) of which one end is connected to the gate bus bar (38) and the other end is grounded. Furthermore, the high-frequency amplifier (1) is configured such that the capacitors (39-1) to (39-8) are arranged in positions in which the capacitor (39) side impedances seen from each of the gate fingers (35-m) of the gate ground transistor (32) are aligned with one another.

Inventors:

KAMIOKA JUN (JP)
SHINJO SHINTARO (JP)

Application Number:

PCT/JP2020/015343

Publication Date:

October 07, 2021

Filing Date:

April 03, 2020

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP (JP)

International Classes:

H03F1/22; H03F3/193

Domestic Patent References:

WO2014073091A1	2014-05-15
WO2014073091A1	2014-05-15

Foreign References:

JP2015192205A

2015-11-02

Other References: