Title:
HIGH-FREQUENCY PLASMA CVD DEVICE, HIGH-FREQUENCY PLASMA CVD METHOD, AND SEMICONDUCTOR THIN FILM MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2010/041679
Kind Code:
A1
Abstract:
A plasma generation source constitutes a VHF plasma CVD device using a power source having a frequency band of 30 MHz to 300 MHz. Provided is a large-area and uniform VHF plasma CVD device which can suppress effects of a stationary wave, generation of harmful plasma generated other than between a pair of electrodes, and power consumption other than between the pair of electrodes. Provided is also a method for the VHF plasma CVD.
The distance between a first and a second power supply point which are arranged at the two ends of the electrode is set to a quarter of a wavelength of the used power multiplied by an odd number. Two pulse powers which are temporally separated from each other are supplied from the both ends of the electrode via a balance/unbalance converter, respectively, so as to temporally alternately generate a first stationary wave having a loop positioned at the center of the electrode and a second stationary wave having a knot positioned at the center of the electrode.
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Inventors:
MURATA MASAYOSHI (JP)
Application Number:
PCT/JP2009/067480
Publication Date:
April 15, 2010
Filing Date:
October 07, 2009
Export Citation:
Assignee:
MURATA MASAYOSHI (JP)
International Classes:
H01L21/205; C23C16/505; H01L31/04; H05H1/46
Foreign References:
| JP2006332704A | 2006-12-07 | |||
| JP2005123203A | 2005-05-12 |
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