Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
HIGH FREQUENCY SWITCH FOR HIGH FREQUENCY SIGNAL TRANSMITTING/RECEIVING DEVICES
Document Type and Number:
WIPO Patent Application WO/2020/004991
Kind Code:
A1
Abstract:
Disclosed is a high frequency switch including a substrate, a pair of ground sections provided on the substrate, a center conductor provided between the pair of ground sections, and a photoconductive semiconductor element provided on the center conductor and extending between the center conductor and the pair of ground sections.

Inventors:
LUKYANOV ANTON SERGEEVICH (RU)
SHEPELEVA ELENA ALEKSANDROVNA (RU)
NIKISHOV ARTEM YURIEVICH (RU)
EVTYUSHKIN GENNADIY ALEKSANDROVICH (RU)
MAKURIN MIKHAIL NIKOLAEVICH (RU)
KIM KISOO (KR)
YANG DONGIL (KR)
LEE JONGIN (KR)
Application Number:
PCT/KR2019/007838
Publication Date:
January 02, 2020
Filing Date:
June 27, 2019
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SAMSUNG ELECTRONICS CO LTD (KR)
International Classes:
H01L31/08; H01L31/02; H01L31/16
Domestic Patent References:
WO2012115333A12012-08-30
Foreign References:
US20070290774A12007-12-20
US20070092812A12007-04-26
US20070257256A12007-11-08
US20090009853A12009-01-08
Other References:
PANG ALEXANDER WEIRAN, AN OPTICALLY CONTROLLED CO-PLANAR WAVEGUIDE MILLIMETRE WAVE SWITCH
FLEMISH J R, OPTIMIZATION OF A PHOTONICALLY CONTROLLED MICROWAVE SWITCH AND ATTENUATOR
AVANISH BHADAURIA, OPTICAL CONTROL OF MICROSTRIP STUB ON SILICON SUBSTRATE USING 650 NM AND 850 NM WAVELENGTHS ILLUMINATION
Attorney, Agent or Firm:
Y.P.LEE,MOCK & PARTNERS (KR)
Download PDF: