Title:
HIGH-PURITY 1-FLUOROBUTANE AND PLASMA ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2014/203842
Kind Code:
A1
Abstract:
The present invention provides: high-purity 1-fluorobutane characterized by having a purity of 99.9% by vol or more and containing butene compounds in the total amount of 1000 ppm by volume or less; the use of the high-purity 1-fluorobutane as a dry etching gas; and a plasma etching method using the high-purity 1-fluorobutane as an etching gas.
According to the present invention, high-purity 1-fluorobutane which is suitable as a plasma reaction gas for semiconductors, the use of the high-purity 1-fluorobutane as a dry etching gas, and a plasma etching method using the high-purity 1-fluorobutane as an etching gas are provided.
Inventors:
SUGIMOTO TATSUYA (JP)
Application Number:
PCT/JP2014/065847
Publication Date:
December 24, 2014
Filing Date:
June 16, 2014
Export Citation:
Assignee:
ZEON CORP (JP)
International Classes:
C07C19/08; C07C17/383; C07C17/389; H01L21/3065
Domestic Patent References:
| WO2009123038A1 | 2009-10-08 | |||
| WO2009123038A1 | 2009-10-08 |
Foreign References:
| JP2013006786A | 2013-01-10 | |||
| JP2014024785A | 2014-02-06 | |||
| US20110068086A1 | 2011-03-24 | |||
| JP2013006786A | 2013-01-10 | |||
| JP2014024785A | 2014-02-06 | |||
| JP2012165797A | 2012-09-06 |
Other References:
KAGAKU DAIJITEN, vol. 7, 30 October 1961 (1961-10-30), pages 878, XP008182590
TETRAHEDRON, vol. 29, 1973, pages 1877
JOURNAL OF FLUORINE CHEMISTRY, vol. 73, 1995, pages 185
See also references of EP 3012241A4
TETRAHEDRON, vol. 29, 1973, pages 1877
JOURNAL OF FLUORINE CHEMISTRY, vol. 73, 1995, pages 185
See also references of EP 3012241A4
Attorney, Agent or Firm:
OHISHI HARUHITO (JP)
Haruhito Oishi (JP)
Haruhito Oishi (JP)
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