HIGH RATE DEPOSITION IN A BATCH REACTOR

Title:

HIGH RATE DEPOSITION IN A BATCH REACTOR

Document Type and Number:

WIPO Patent Application WO2004015742

Kind Code:

A3

Abstract:

A chemical vapor deposition reactor (59) including a wafer (60) boat (77) with a vertical stack of horizontally oriented susceptors (62) serving as thermal plates (76) and each having pins (228) extending upward for suspending a wafer (60) between a pair of susceptors (62). Reactant gas injector (65) and exhaust apparatus (272) are positioned to concentrate a forceful supply of reactant gas across each wafer (60) at a speed in excess of 10 cm/sec. The pressure is held in the range of 0.1 to 5,000 mTorr. The forceful gas flow avoids gas depletion effects, thinning the boundary layer and resulting in faster delivery of reactants to substrate surfaces, resulting in surface rate reaction limited operation. A plurality of individually controllable heaters (78) are spaced vertically around the sides of the boat (77). Temperature sensors (130) monitor the temperature along the boat (77) height and provide input to a controller (118) for adjusting the heater drive to optimize the temperature uniformity.

Inventors:

COOK ROBERT C
BRORS DANIEL L
MITCHENER JAMES
ORMONDE GABE

Application Number:

PCT/US2003/024253

Publication Date:

August 26, 2004

Filing Date:

August 04, 2003

Export Citation:

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Assignee:

TORREX EQUIPMENT CORP (US)

International Classes:

C23C16/24; C23C16/34; C23C16/44; C23C16/455; C23C16/458; C23C16/46; C23C16/48; C23C16/509; C23C16/54; H01J37/32; H01L21/00; H01L21/205; H01L21/318; H01L21/677; (IPC1-7): C23C16/453; C23C16/455

Foreign References:

US4745088A	1988-05-17
US5310339A	1994-05-10
US5522934A	1996-06-04
US4753192A	1988-06-28
US6029602A	2000-02-29

Other References: