Title:
HIGH-TEMPERATURE ENDOSCOPE PREVENTING IMPURITIES OF INGOT GROWTH APPARATUS FROM BEING DEPOSITED
Document Type and Number:
WIPO Patent Application WO/2023/038257
Kind Code:
A1
Abstract:
Disclosed is a high-temperature endoscope of an ingot growth apparatus in which impurity deposition is prevented by having a structure that increases a flow rate of an inert gas for preventing impurities from being deposited. A high-temperature endoscope preventing impurities of an ingot growth apparatus from being deposited, according to one embodiment of the present invention, may comprise: a frame extending to the inside of a chamber of the ingot growth apparatus and having a gas discharge port provided at an end portion thereof through which an inert gas is discharged; a lens installed at the center of the end portion of the frame and protected by the inert gas discharged from the gas discharge port; and a guide tube installed on an outer surface of the frame and having a guide portion extending from the end portion of the frame so as to guide the inert gas, thereby increasing a flow rate and preventing impurities from being deposited on the lens.
Inventors:
JEON HAN WOONG (KR)
PARK JIN SUNG (KR)
KIM KEUN HO (KR)
LEE YOUNG MIN (KR)
PARK JIN SUNG (KR)
KIM KEUN HO (KR)
LEE YOUNG MIN (KR)
Application Number:
PCT/KR2022/009798
Publication Date:
March 16, 2023
Filing Date:
July 06, 2022
Export Citation:
Assignee:
HANWHA SOLUTIONS CORP (KR)
International Classes:
G02B23/24; C30B15/26
Foreign References:
| KR102271830B1 | 2021-07-01 | |||
| JP2005093953A | 2005-04-07 | |||
| JP2019516446A | 2019-06-20 | |||
| JPH06182570A | 1994-07-05 | |||
| JP2001287072A | 2001-10-16 |
Attorney, Agent or Firm:
ERUUM & LEEON INTELLECTUAL PROPERTY LAW FIRM (KR)
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