Title:
HYBRID SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2011/055672
Kind Code:
A1
Abstract:
A hybrid silicon wafer which is a silicon wafer characterized by having a structure wherein monocrystalline silicon is embedded in polycrystalline silicon that is produced by the unidirectional solidification melt method. The aforesaid hybrid silicon wafer which has a structure wherein the longitudinal plane of crystal grains of the polycrystalline silicon part, that is produced by the unidirectional solidification melt method, is referred to as a wafer plane and the monocrystalline silicon is embedded in such a manner that the longitudinal direction of the crystal grains of the polycrystalline silicon makes an angle of 120o-150o with respect to the cleavage plane of the monocrystalline silicon. Thus, a hybrid silicon wafer having the functions of both a polycrystalline silicon wafer and a monocrystalline silicon wafer is provided.
Inventors:
SUZUKI RYO (JP)
TAKAMURA HIROSHI (JP)
TAKAMURA HIROSHI (JP)
Application Number:
PCT/JP2010/069139
Publication Date:
May 12, 2011
Filing Date:
October 28, 2010
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
SUZUKI RYO (JP)
TAKAMURA HIROSHI (JP)
SUZUKI RYO (JP)
TAKAMURA HIROSHI (JP)
International Classes:
C30B33/06; C30B11/02; C30B31/02; H01L21/02
Domestic Patent References:
| WO2010004863A1 | 2010-01-14 |
Foreign References:
| JPH06283469A | 1994-10-07 | |||
| JP2008101277A | 2008-05-01 | |||
| JP3342898B2 | 2002-11-11 | |||
| JP3819863B2 | 2006-09-13 | |||
| JP2005132671A | 2005-05-26 | |||
| JP2008179988A | 2008-08-07 |
Other References:
See also references of EP 2497849A4
Attorney, Agent or Firm:
OGOSHI ISAMU (JP)
Isamu Ogoshi (JP)
Isamu Ogoshi (JP)
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