HYDROCARBON THIN FILM, METHOD OF PREPARING HYDROCARBON THIN FILM, AND SEMICONDUCTOR DEVICE COMPRISING HYDROCARBON THIN FILM

Title:

HYDROCARBON THIN FILM, METHOD OF PREPARING HYDROCARBON THIN FILM, AND SEMICONDUCTOR DEVICE COMPRISING HYDROCARBON THIN FILM

Document Type and Number:

WIPO Patent Application WO/2020/141850

Kind Code:

A1

Abstract:

The present invention relates to a hydrocarbon thin film, a method of preparing same, and a semiconductor device using same, wherein the hydrocarbon thin film shows desirable uniformity as a thin film while having a significantly higher dielectric constant than that of a SiO2 thin film or a Hf- or Zr-based oxide thin film; and has an extremely low leakage current and a high dielectric strength, and thus can be applied to a semiconductor device of 10 nm node or less and achieve a desirable performance. In particular, the hydrocarbon thin film has an amorphous structure; and has a dielectric constant of 10 or more, wherein a ratio of relative intensities between hydrogen and carbon as measured by secondary-ion mass spectrometry (SIMS) is in the range of 4 to 30, and on C 1s spectra of X-ray photoelectron spectroscopy (XPS), a binding energy peak present between 280 eV to 290 eV has a binding energy (eV) shift of 0.5 eV or less between before and after a surface treatment using 1 keV argon (Ar+) plasma etching under any one of time conditions in the range of 5 seconds to 20 seconds.

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Inventors:

KIM EUI TAE (KR)
KIM DONG OK (KR)
LEE ZONG HOON (KR)

Application Number:

PCT/KR2019/018783

Publication Date:

July 09, 2020

Filing Date:

December 31, 2019

Export Citation:

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Assignee:

IAC IN NAT UNIV CHUNGNAM (KR)
ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECH UNIST (KR)

International Classes:

H01L21/02; H01L21/324; H01L21/8234; H01L29/10

Foreign References:

KR20070008333A	2007-01-17
KR20170056093A	2017-05-23
KR20150055473A	2015-05-21
KR20130047054A	2013-05-08
KR20170014559A	2017-02-08

Attorney, Agent or Firm:

WON, Dae Gyu (KR)

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