Title:
IGBT CHIP HAVING COMPOSITE GATE STRUCTURE COMPRISING DUMMY GATE
Document Type and Number:
WIPO Patent Application WO/2019/157818
Kind Code:
A1
Abstract:
An IGBT chip having a composite gate structure comprising a dummy gate. The composite gate structure comprises a gate region (401) and an active region. The gate region (401) comprises a first trench gate (501), a second trench gate (502), and a planar gate (503). The planar gate (503) is connected to the first trench gate (501) and can increase current density and reduce power consumption. The second trench gate (502) is suspended, grounded, or connected to the planar gate (503), and can effectively provide shielding against mutual interference between the planar gate (503) and the first trench gate (501), thereby optimizing input/output capacitance of the composite gate and switching speed of the chip and reducing switching losses.
Inventors:
LIU GUOYOU (CN)
ZHU CHUNLIN (CN)
ZHU LIHENG (CN)
ZHU CHUNLIN (CN)
ZHU LIHENG (CN)
Application Number:
PCT/CN2018/106112
Publication Date:
August 22, 2019
Filing Date:
September 18, 2018
Export Citation:
Assignee:
ZHUZHOU CRRC TIMES ELECTRIC CO LTD (CN)
International Classes:
H01L29/739; H01L29/423
Foreign References:
| CN106783952A | 2017-05-31 | |||
| CN205231070U | 2016-05-11 | |||
| CN108428740A | 2018-08-21 | |||
| CN108511521A | 2018-09-07 | |||
| CN104051509A | 2014-09-17 |
Attorney, Agent or Firm:
YUHONG INTELLECTUAL PROPERTY LAW FIRM (CN)
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