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Title:
IGBT CHIP HAVING COMPOSITE GATE AND THREE-DIMENSIONAL TRENCH
Document Type and Number:
WIPO Patent Application WO/2019/157819
Kind Code:
A1
Abstract:
An IGBT chip having a composite gate and a three-dimensional trench. The IGBT chip comprises: a polysilicon trench gate electrode; a first oxide layer; a P well region; a doped region comprising an N++ doped region and a P++ doped region; a second oxide layer covering surfaces of regions at two sides of the P-well region, a surface portion of the P-well region not provided with the doped region, and a portion of the doped region; a polysilicon planar gate electrode; and a third oxide layer. Current density of the IGBT chip can thus be increased, reducing on-state voltage drop.

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Inventors:
LIU GUOYOU (CN)
ZHU CHUNLIN (CN)
ZHU LIHENG (CN)
Application Number:
PCT/CN2018/106113
Publication Date:
August 22, 2019
Filing Date:
September 18, 2018
Export Citation:
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Assignee:
ZHUZHOU CRRC TIMES ELECTRIC CO LTD (CN)
International Classes:
H01L29/739; H01L29/06; H01L29/423
Foreign References:
US20160197169A12016-07-07
CN107068742A2017-08-18
CN101308872A2008-11-19
CN104659088A2015-05-27
CN205231070U2016-05-11
CN106463527A2017-02-22
CN104347689A2015-02-11
Attorney, Agent or Firm:
YUHONG INTELLECTUAL PROPERTY LAW FIRM (CN)
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