III NITRIDE COMPOUND SEMICONDUCTOR LAMINATED STRUCTURE

WIPO Patent Application WO/2007/129773

A1

Provided is a III nitride compound semiconductor laminated structure wherein a III nitride compound semiconductor layer having stable and excellent crystallinity is laminated on a substrate of a different type. The III nitride compound semiconductor laminated structure is provided with a first layer composed of a III nitride compound semiconductor, and a second layer composed of a III nitride compound semiconductor in contact with the first layer, on a substrate. The first layer includes a columnar crystal having a clear crystal interface, at a density of 1x103 pieces/μm2 to 1x105 pieces/μm2.

MIKI HISAYUKI (JP)
SAKAI HIROMITSU (JP)
HANAWA KENZO (JP)
YOKOYAMA YASUNORI (JP)
SASAKI YASUMASA (JP)
KAJI HIROAKI (JP)

PCT/JP2007/059820

November 15, 2007

May 08, 2007

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SHOWA DENKO KK (JP)
MIKI HISAYUKI (JP)
SAKAI HIROMITSU (JP)
HANAWA KENZO (JP)
YOKOYAMA YASUNORI (JP)
SASAKI YASUMASA (JP)
KAJI HIROAKI (JP)

C23C14/06; C23C14/34; C23C16/02; C23C16/34; H01L33/00; H01L21/203; H01L21/205; H01L33/16

JPH11354846A	1999-12-24
JP2005244202A	2005-09-08
JP2004096021A	2004-03-25
JP2005210091A	2005-08-04
JP3026087B2	2000-03-27
JPH04297023A	1992-10-21
JP2003243302A	2003-08-29
JPH0586646B2	1993-12-13
JP3440873B2	2003-08-25
JP3700492B2	2005-09-28

See also references of EP 2019437A4
JOURNAL OF CRYSTAL GROWTH, vol. 115, 1991, pages 628 - 633

AOKI, Atsushi et al. (Toranomon 37 Mori Bldg.5-1, Toranomon 3-chom, Minato-ku Tokyo 23, JP)

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