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Patent Searching and Data


Title:
IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/074230
Kind Code:
A1
Abstract:
This imaging device (100) comprises a first electrode, a second electrode, a photoelectric conversion layer (4), a charge injection layer (5), and a charge storage area. The second electrode faces the first electrode. The photoelectric conversion layer (4) is located between the first electrode and the second electrode, includes a donor semiconductor material (4A) and an acceptor semiconductor material (4B), and generates a pair of an electron and an electron hole. The charge injection layer (5) is located between the first electrode and the photoelectric conversion layer (4). The charge storage area is electrically connected to the second electrode and stores the electron hole. The ionization potential of the charge injection layer (5) is no greater than the ionization potential of the acceptor semiconductor material (4B) and the electron affinity of the charge injection layer (5) is no greater than the electron affinity of the acceptor semiconductor material (4B). The light transmittance of the charge injection layer (5) is at least 70%.

Inventors:
MITSUISHI MORIO
YOKOYAMA TAKAMICHI
IIJIMA HIROAKI
Application Number:
PCT/JP2022/035984
Publication Date:
May 04, 2023
Filing Date:
September 27, 2022
Export Citation:
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Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H10K30/60; H01L27/146; H10K39/32
Domestic Patent References:
WO2020162095A12020-08-13
WO2020008186A12020-01-09
WO2017077790A12017-05-11
Foreign References:
JP2009099866A2009-05-07
JP2018085427A2018-05-31
JP2015233117A2015-12-24
JP2010263175A2010-11-18
JP2016225456A2016-12-28
US20050110007A12005-05-26
Attorney, Agent or Firm:
KAMATA Kenji et al. (JP)
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