IMAGING PANEL AND X-RAY IMAGING DEVICE EQUIPPED WITH SAME

WIPO Patent Application WO/2016/167179

A1

The present invention suppresses a shift in the threshold voltage of a thin-film transistor during X-ray irradiation. This imaging panel, which has a plurality of pixels and images scintillation light obtained by converting X-rays emitted from an X-ray source by using a scintillator, is equipped with a photodiode 15, a TFT 14, and an organic film 43. The photodiode 15 is provided in each of the plurality of pixels, receives the scintillation light and converts the same to an electric charge. The TFT 14 is provided in each of the plurality of pixels, and retrieves the electric charge converted by the photodiode 15. The TFT 14 has an oxide semiconductor layer 142 and a gate electrode 141, and also has a source electrode 143S and a drain electrode 143D that are formed in one section on the oxide semiconductor layer 142. Inside one pixel, a region other than the region provided with a contact hole CH1 for connecting the photodiode 15 and the drain electrode 143D exists where the organic film 43 is not present in the layer above the TFT 14.

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SAITOH TAKAO
TAKAMARU YUTAKA
KANZAKI YOHSUKE
KANEKO SEIJI

PCT/JP2016/061421

October 20, 2016

April 07, 2016

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SHARP KK (JP)

H01L27/146; G01T1/20; H01L21/336; H01L27/144; H01L29/786; H04N5/32

WO2009139209A1

2009-11-19

JP2013157347A	2013-08-15
JP2014078651A	2014-05-01
JP2011176274A	2011-09-08
JP2011114229A	2011-06-09
JP2013140987A	2013-07-18
US20140217399A1	2014-08-07

KAWAKAMI Keiko et al. (JP)
Keiko Kawakami (JP)

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