Title:
IMAGING WITH GATE CONTROLLED CHARGE STORAGE
Document Type and Number:
WIPO Patent Application WO2005022638
Kind Code:
A3
Abstract:
A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge transfer and low charge loss. The charge storage region is adjacent to a gate of a transistor. The transistor gate is adjacent to the photo-conversion device and, in conjunction with the control gate, transfers photo-generated charge from the photo-conversion device to the charge storage region.
Inventors:
HONG SUNGKWON CHRIS (US)
Application Number:
PCT/US2004/026876
Publication Date:
June 23, 2005
Filing Date:
August 18, 2004
Export Citation:
Assignee:
MICRON TECHNOLOGY INC (US)
HONG SUNGKWON CHRIS (US)
HONG SUNGKWON CHRIS (US)
International Classes:
H01L27/146; H01L27/148; (IPC1-7): H01L27/146
Domestic Patent References:
| WO1997028558A2 | 1997-08-07 |
Foreign References:
| EP0809303A1 | 1997-11-26 | |||
| US6091793A | 2000-07-18 |
Other References:
HUAT AW CH ET AL: "A 128 X 128-PIXEL STANDARD-CMOS IMAGE SENSOR WITH ELECTRONIC SHUTTER", IEEE JOURNAL OF SOLID-STATE CIRCUITS, IEEE INC. NEW YORK, US, vol. 31, no. 12, December 1996 (1996-12-01), pages 1922 - 1930, XP000691811, ISSN: 0018-9200
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