Title:
IMPROVED FAR-FIELD NITRIDE BASED SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO2000024097
Kind Code:
A8
Abstract:
A nitride semiconductor device that comprises a first layer, a second layer and a buffer layer sandwiched between the first layer and the second layer. The second layer is a layer of a single-crystal nitride semiconductor material including AIN and has a thickness greater than the thickness at which cracks would form if the second layer was grown directly on the first layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AIN. Incorporating the nitride semiconductor device into a semiconductor laser diode enables the laser diode to generate coherent light having a far-field pattern that exhibits a single peak.
Inventors:
TAKEUCHI TETSUYA (JP)
KANEKO YAWARA (JP)
YAMADA NORIHIDE (JP)
AMANO HIROSHI (JP)
AKASAKI ISAMU (JP)
KANEKO YAWARA (JP)
YAMADA NORIHIDE (JP)
AMANO HIROSHI (JP)
AKASAKI ISAMU (JP)
Application Number:
PCT/US1999/024146
Publication Date:
May 17, 2001
Filing Date:
October 14, 1999
Export Citation:
Assignee:
HEWLETT PACKARD CO (US)
TAKEUCHI TETSUYA (JP)
KANEKO YAWARA (JP)
YAMADA NORIHIDE (JP)
AMANO HIROSHI (JP)
AKASAKI ISAMU (JP)
TAKEUCHI TETSUYA (JP)
KANEKO YAWARA (JP)
YAMADA NORIHIDE (JP)
AMANO HIROSHI (JP)
AKASAKI ISAMU (JP)
International Classes:
H01S5/00; H01S5/20; H01S5/323; H01S5/343; (IPC1-7): H01S5/20
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