Title:
IMPROVED PROCESS FOR DEPOSITION OF SEMICONDUCTOR FILMS
Document Type and Number:
WIPO Patent Application WO2002065516
Kind Code:
A3
Abstract:
Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, trisilane is employed to deposit SiGe-containing films that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
Inventors:
TODD MICHAEL A
Application Number:
PCT/US2002/004746
Publication Date:
November 13, 2003
Filing Date:
February 12, 2002
Export Citation:
Assignee:
ASM INC (US)
International Classes:
C23C16/24; C23C16/02; C23C16/42; C30B25/02; H01L21/20; H01L21/205; H01L21/28; H01L21/285; H01L21/316; H01L21/331; H01L21/337; H01L21/425; H01L21/469; H01L21/8238; H01L27/092; H01L29/51; H01L29/737; H01L29/78; H01L31/18; H01L31/20; (IPC1-7): H01L21/205; C23C16/00; H01L31/20; H01L31/18
Foreign References:
| US5214002A | 1993-05-25 | |||
| EP1065728A2 | 2001-01-03 | |||
| US5356821A | 1994-10-18 |
Other References:
OLIVARES J ET AL: "Solid-phase crystallization of amorphous SiGe films deposited by LPCVD on SiO2 and glass", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, VOL. 337, NR. 1-2, PAGE(S) 51-54, ISSN: 0040-6090, XP004197094
PATENT ABSTRACTS OF JAPAN vol. 017, no. 375 (E - 1397) 14 July 1993 (1993-07-14)
PATENT ABSTRACTS OF JAPAN vol. 017, no. 375 (E - 1397) 14 July 1993 (1993-07-14)
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