IN-SITU-ETCH-ASSISTED HDP DEPOSITION USING SIF4 AND HYDROGEN

WIPO Patent Application WO2005024094

A3

A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 10<11> ions/cm<3> is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450 °C.

JP2023541664	Apparatus and method for analyzing and/or processing samples with particle beams
WO/2007/119123	INTERCONNECTS AND HEAT DISSIPATORS BASED ON NANOSTRUCTURES

KARIM ZIAUL M (US)
LI DONGQUIN (US)
BYUN JEONG SOO (US)
PHAM THANH N (US)

PCT/US2004/026610

June 30, 2005

August 16, 2004

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APPLIED MATERIALS INC (US)
KARIM ZIAUL M (US)
LI DONGQUIN (US)
BYUN JEONG SOO (US)
PHAM THANH N (US)

C23C16/04; C23C16/40; C23C16/50; H01L21/316; (IPC1-7): C23C16/40; C23C16/50; C23C16/04; H01L21/316

US20020187655A1	2002-12-12
US6395150B1	2002-05-28
US20040166694A1	2004-08-26
US5571576A	1996-11-05
US6326064B1	2001-12-04

ALONSO J C ET AL: "Fluorinated-chlorinated SiO2 films prepared at low temperature by remote plasma-enhanced chemical-vapor deposition using mixtures of SiF4 and SiCl4", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A. VACUUM, SURFACES AND FILMS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 19, no. 2, March 2001 (2001-03-01), pages 507 - 514, XP012005495, ISSN: 0734-2101

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