Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
INDIUM SPUTTERING TARGET MEMBER AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2013/088785
Kind Code:
A1
Abstract:
Provided is an indium sputtering target that obtains a high film formation rate. An indium sputtering target member has crystal grains having linear grain boundaries at the sputtered surface, and the area fraction of the crystal grains is at least 65.1%.

Inventors:
ENDO YOUSUKE (JP)
SAKAMOTO MASARU (JP)
Application Number:
PCT/JP2012/070764
Publication Date:
June 20, 2013
Filing Date:
August 15, 2012
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
JX NIPPON MINING & METALS CORP (JP)
ENDO YOUSUKE (JP)
SAKAMOTO MASARU (JP)
International Classes:
C23C14/34; C22F1/16; C22F1/00
Domestic Patent References:
WO2009107763A12009-09-03
Foreign References:
JP2011236445A2011-11-24
JP2011179054A2011-09-15
JP2007113033A2007-05-10
JP2010024474A2010-02-04
JPS6344820B21988-09-07
Attorney, Agent or Firm:
AXIS Patent International (JP)
Axis international patent business corporation (JP)
Download PDF:
View/Download PDF      PDF Help
Claims:



 
Previous Patent: METAL PURIFICATION METHOD, METAL, SILICON PURIFICATION METHOD, SILICON, CRYSTALLINE SILICON MATERIAL...

Next Patent: LIQUID CRYSTAL DISPLAY DEVICE AND LIQUID CRYSTAL TELEVISION