INSULATING LAYER, ELECTRONIC DEVICE, FIELD EFFECT TRANSISTOR, AND POLYVINYLTHIOPHENOL

Title:

INSULATING LAYER, ELECTRONIC DEVICE, FIELD EFFECT TRANSISTOR, AND POLYVINYLTHIOPHENOL

Document Type and Number:

WIPO Patent Application WO/2008/016110

Kind Code:

A1

Abstract:

For the purpose of providing an insulting layer which enables to improve device characteristics when used in an electronic device, a polymer insulator containing a repeating unit represented by the formula below is contained in the insulating layer. In the formula, Ra represents a direct bond or an arbitrary linking group; Ar represents an optionally substituted divalent aromatic group; and Rb represents a hydrogen atom, a fluorine atom or a monovalent organic group.

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Inventors:

ARAMAKI SHINJI (JP)
SAKAI YOSHIMASA (JP)

Application Number:

PCT/JP2007/065175

Publication Date:

February 07, 2008

Filing Date:

August 02, 2007

Export Citation:

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Assignee:

MITSUBISHI CHEM CORP (JP)
ARAMAKI SHINJI (JP)
SAKAI YOSHIMASA (JP)

International Classes:

C08F12/30; H01L21/312; H01L29/786; H01L51/05; H01L51/30; H01L51/40

Foreign References:

JP2006245559A	2006-09-14
JP2004115805A	2004-04-15
JP2005026698A	2005-01-27
US6232157B1	2001-05-15
JP2005303270A	2005-10-27
JP2006213014A	2006-08-17
JP2007201410A	2007-08-09

Other References:

APPL. PHYS. LETT., vol. 81, no. 2, 2002, pages 289
See also references of EP 2048171A4

Attorney, Agent or Firm:

SANADA, Tamotsu (10-31 Kichijoji-honcho 1-chome, Musashino-sh, Tokyo 04, JP)

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