INTEGRATED CIRCUIT FOR DRIVING SEMICONDUCTOR DEVICE AND POWER CONVERTER

Title:

INTEGRATED CIRCUIT FOR DRIVING SEMICONDUCTOR DEVICE AND POWER CONVERTER

Document Type and Number:

WIPO Patent Application WO/2004/073065

Kind Code:

A1

Abstract:

An integrated circuit for driving a semiconductor device can meet needs such as high output (large current), high voltage, and low loss, has a small size, is produced at low cost, and has a high reliability. A power converter mounted with such an integrated circuit is also disclosed. Circuit elements constituting a drive section of an upper arm drive circuit (212), a level shift circuit (20) including a current sensing circuit (210), a drive section of a lower arm drive circuit (222), and a drive signal processing circuit (224) are integrated and built in one high breakdown voltage IC chip (200). Circuit elements constituting a final output stage buffer section (213) of the upper arm drive circuit (212) are built in a vertical p-channel MOS-FET chip (213p) and a vertical n-channel MOS-FET chip (213n). Circuit elements constituting a final output stage buffer section (223) of the lower arm drive circuit (222) are built in a vertical p-channel MOS-FET chip (223p) and a vertical n-channel MOS-FET chip (223n). Thus, a driver IC (2) is fabricated.

Inventors:

TAKAHASHI YOSHIMASA (JP)
SAKURAI NAOKI (JP)
RURA MASASHI (JP)
IWAMURA MASAHIRO (JP)
MORI MUTSUHIRO (JP)

Application Number:

PCT/JP2004/001555

Publication Date:

August 26, 2004

Filing Date:

February 13, 2004

Export Citation:

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Assignee:

HITACHI LTD (JP)
TAKAHASHI YOSHIMASA (JP)
SAKURAI NAOKI (JP)
RURA MASASHI (JP)
IWAMURA MASAHIRO (JP)
MORI MUTSUHIRO (JP)

International Classes:

H02M1/08; (IPC1-7): H01L25/07; H01L25/18; H02M7/538

Foreign References:

JPS5752386A	1982-03-27
JPH09247951A	1997-09-19
JP2000091499A	2000-03-31
JP2002232280A	2002-08-16

Other References: