Title:
INTEGRATED PHOTOELECTRIC SENSOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/126864
Kind Code:
A1
Abstract:
Provided by the present invention is an integrated photoelectric sensor having high gain and a wide dynamic response range. A doped source region and doped drain region thereof are arranged at an interval at the top part of a substrate, a source electrode is formed at the top part of the doped source region, and a drain electrode is formed at the top part of the doped drain region. A gate insulating layer is arranged between the doped source region and the doped drain region, and a gate electrode is arranged at the top part thereof. The doped source region, the source electrode, the doped drain region, the drain electrode, the gate insulating layer and the gate electrode form a field effect transistor. A photosensitive doped region and the substrate form a photodiode, the top part of the photosensitive doped region forms a top electrode of the photodiode, and the substrate is a bottom electrode of the photodiode and is connected to a back trench of the field effect transistor. An isolation region is arranged between the photodiode and the field effect transistor. Also provided by the present invention is a preparation method for the photoelectric sensor. The integrated photoelectric sensor has a simple structure and is easy to make at a low cost.
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Inventors:
WANG KAI (CN)
QI YIHONG (CN)
ZHOU XIANDA (CN)
QI YIHONG (CN)
ZHOU XIANDA (CN)
Application Number:
PCT/CN2021/078699
Publication Date:
June 23, 2022
Filing Date:
March 02, 2021
Export Citation:
Assignee:
UNIV SUN YAT SEN (CN)
International Classes:
H01L27/146
Foreign References:
| CN213583789U | 2021-06-29 | |||
| CN106847815A | 2017-06-13 | |||
| CN110676272A | 2020-01-10 | |||
| CN202513189U | 2012-10-31 |
Attorney, Agent or Firm:
GUANGZHOU SINO PATENT & TRADEMARK AGENT CO., LTD. (CN)
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