INTEGRATED PHOTONIC DEVICE COMPRISING HOLLOWED SILICON SUBSTRATE-BASED LED AND OPTICAL WAVEGUIDE AND MANUFACTURING METHOD THEREOF

WIPO Patent Application WO/2017/075945

A1

Provided are an integrated photonic device comprising a hollowed silicon substrate-based LED and an optical waveguide, and a manufacturing method thereof. An anisotropic silicon etching technique is used to remove a bottom silicon substrate (1) and an epitaxial buffer layer (2) from a device structure to obtain an integrated photonic device comprising a hollowed nitride thin-film LED and an optical waveguide. A rear-side thinning (etching) operation is further performed on the nitride thin-film to obtain an integrated photonic device comprising an ultra-thin hollowed silicon substrate-based LED and an optical waveguide, thereby reducing internal light loss of an LED device, and increasing a light extraction efficiency. A light source and an optical waveguide are integrated into the same wafer, thereby solving a problem relating to monolithic integration of in-plane photons. Such an arrangement also enables a light beam emitted by an LED to be transmitted along the optical waveguide, thereby solving a problem relating to transmission of a light beam within an optical waveguide, and realizing transmission of a light beam in a plane.

WANG YONGJIN (CN)
ZHU GUIXIA (CN)
BAI DAN (CN)
YUAN JIALEI (CN)
XU YIN (CN)
ZHU HONGBO (CN)

PCT/CN2016/080090

May 11, 2017

April 23, 2016

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UNIV NANJING POSTS & TELECOMMUNICATIONS (CN)

G02B6/122; G02B6/13; G02B6/136; H01L33/02

WO2015108488A1

2015-07-23

CN103779452A	2014-05-07
CN105445854A	2016-03-30
CN103633203A	2014-03-12
CN1481032A	2004-03-10
CN104170089A	2014-11-26

JIANGSU AIXIN LAW FIRM (CN)

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