Title:
INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2020/258124
Kind Code:
A1
Abstract:
A method for fabricating a semiconductor device that includes forming a mask stack over a semiconductor structure. The mask stack has a first mask layer and a second mask layer, where the second mask layer is arranged between the first mask layer and the semiconductor structure. The method further includes patterning a first pattern in the mask stack. The first pattern includes a first opening having first sidewalls formed in the first mask layer, a second opening having second sidewalls formed in the second mask layer, and a third opening having third sidewalls formed in the semiconductor structure. The first, second, and third sidewalls of the respective openings of the first pattern are formed around a central axis, where the second sidewalls of the second opening are located further away from the central axis than both the first and third sidewalls of the first and third openings, respectively.
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Inventors:
YANG GANG (CN)
Application Number:
PCT/CN2019/093170
Publication Date:
December 30, 2020
Filing Date:
June 27, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L21/768
Foreign References:
| CN107689319A | 2018-02-13 | |||
| CN107689319A | 2018-02-13 | |||
| CN109585364A | 2019-04-05 | |||
| CN109804463A | 2019-05-24 | |||
| CN1522465A | 2004-08-18 | |||
| US20010029105A1 | 2001-10-11 | |||
| US20020173160A1 | 2002-11-21 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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