INTERNAL REFORMING SUBSTRATE FOR EPITAXIAL GROWTH, INTERNAL REFORMING SUBSTRATE WITH MULTILAYER FILM, SEMICONDUCTOR DEVICE, BULK SEMICONDUCTOR SUBSTRATE, AND PRODUCTION METHODS THEREFOR

WIPO Patent Application WO/2011/108698

A1

Disclosed are an internal reforming substrate for epitaxial growth having an arbitrary warped shape and/or amount of warping, an internal reforming substrate with multilayer film using the same, a semiconductor device, a bulk semiconductor substrate, and production methods therefor. The internal reforming substrate for epitaxial growth comprises a single crystal substrate and a heat-denatured layer that is formed in the interior of said single crystal substrate by irradiating the single crystal substrate with a laser.

AIDA HIDEO (JP)
AOTA NATSUKO (JP)
HOSHINO HITOSHI (JP)
FURUTA KENJI (JP)
HAMAMOTO TOMOSABURO (JP)
HONJO KEIJI (JP)

PCT/JP2011/055055

September 09, 2011

March 04, 2011

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NAMIKI PRECISION JEWEL CO LTD (JP)
DISCO CORP (JP)
AIDA HIDEO (JP)
AOTA NATSUKO (JP)
HOSHINO HITOSHI (JP)
FURUTA KENJI (JP)
HAMAMOTO TOMOSABURO (JP)
HONJO KEIJI (JP)

B23K26/40; C30B29/20; C30B33/02; H01L21/02; H01L21/20; H01L21/268; H01L21/324; H01L33/00

JP2008006492A	2008-01-17
JP2006196558A	2006-07-27
JP2003264194A	2003-09-19
JP2010165817A	2010-07-29
JP3250438B2	2002-01-28
JP2006347776A	2006-12-28
JP2008006492A	2008-01-17

JPN. J. APPL. PHYS., vol. 32, 1993, pages 1528 - 1533
J. CRYST. GROWTH, vol. 272, no. 1-4, 2004, pages 94 - 99
See also references of EP 2543752A4

IAT WORLD PATENT LAW FIRM (JP)
Eye アット international patent business corporation (JP)

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