LASER ANNEALING DEVICE

WIPO Patent Application WO/2016/000650

A1

A laser annealing device is used for annealing a silicon chip placed on a workpiece table. The laser annealing device comprises: a laser light source, used for emitting a light beam; a first optical unit, used for converting the light beam emitted by the laser light source into a first type of polarized light; and a second optical unit, comprising a light guide element and a first reflection element, wherein the light guide element is used for enabling the first type of polarized light to be incident for the first time on the surface of the silicon chip along a first light path and reflected by the surface of the silicon chip, and the reflected light is reflected by the first reflection element and then incident for the second time on the surface of the silicon chip along a second light path symmetrical to the first path and reflected by the surface of the silicon chip to the light guide element.

JPH04302136	METHOD FOR FORMING LASER CRYSTALLIZED CLAD LAYER FOR IMPROVED AMORPHOUS SILICON LIGHT EMITTING DIODE AND RADIATION SENSOR
JPH09213965	MANUFACTURE OF SEMICONDUCTOR DEVICE
JPH06302897	LASER DEVICE, ITS OPERATION METHOD AND APPLICATION

SONG CHUNFENG (CN)
ZHANG PENGLI (CN)
LU HAILIANG (CN)

PCT/CN2015/083250

January 07, 2016

July 03, 2015

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SHANGHAI MICROELECTRONICS EQUI (CN)

H01L21/268; B23K26/064

US20030053053A1	2003-03-20
US7564552B2	2009-07-21
US20030010763A1	2003-01-16

SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)
上海思微知识产权代理事务所（普通合伙） (CN)

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