LASER ANNEALING METHOD, LASER ANNEALING DEVICE, AND CRYSTALLIZED SILICON FILM SUBSTRATE

Title:

LASER ANNEALING METHOD, LASER ANNEALING DEVICE, AND CRYSTALLIZED SILICON FILM SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2020/158424

Kind Code:

A1

Abstract:

A first laser beam irradiation of applying a first laser beam to change an amorphous silicon film to a microcrystal silicon film and a second laser beam irradiation of moving a second laser beam along a prescribed direction with the microcrystal silicon film as a starting point and causing lateral crystal growth of a crystallized silicon film on a substrate surface are performed to form microcrystal silicon films and crystallized silicon films alternately on the substrate surface along the prescribed direction.

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Inventors:

YANG YINGBAO (JP)
GOTOH JUN (JP)
MIZUMURA MICHINOBU (JP)
SHIOAKU YOSHIHIRO (JP)

Application Number:

PCT/JP2020/001346

Publication Date:

August 06, 2020

Filing Date:

January 16, 2020

Export Citation:

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Assignee:

V TECH CO LTD (JP)

International Classes:

H01L21/20

Foreign References:

JP2006156676A	2006-06-15
JP2000260709A	2000-09-22
JP2014505348A	2014-02-27
JP2004063478A	2004-02-26
JP2008218493A	2008-09-18
JP2005347694A	2005-12-15

Attorney, Agent or Firm:

NISSAY INTERNATIONAL PATENT OFFICE (JP)

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