Title:
LASER ANNEALING METHOD, LASER ANNEALING DEVICE, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2016/186043
Kind Code:
A1
Abstract:
The present invention is a laser annealing method for irradiating an amorphous silicon thin film 7 bonded to a substrate (5) with laser light L to form polysilicon, wherein multiple irradiation is carried out by changing the region on the amorphous silicon thin film 7 on which the laser light L is irradiated, and a grain diameter distribution is produced such that the crystal grain diameter of the polysilicon decreases from a central part toward a side-end part along at least the central axis C of the region on which the laser light L is irradiated. This makes it possible to realize a laser annealing method in which it is possible to reduce leakage current using a simple process.
Inventors:
MIZUMURA MICHINOBU (JP)
Application Number:
PCT/JP2016/064345
Publication Date:
November 24, 2016
Filing Date:
May 13, 2016
Export Citation:
Assignee:
V TECH CO LTD (JP)
International Classes:
H01L21/20; H01L21/268; H01L21/336; H01L29/786
Foreign References:
| JP2003045803A | 2003-02-14 | |||
| JPH07187890A | 1995-07-25 | |||
| JP2005510063A | 2005-04-14 | |||
| JP2012004250A | 2012-01-05 | |||
| JP2013157549A | 2013-08-15 |
Attorney, Agent or Firm:
OGAWA, Moriaki et al. (JP)
小川 護晃 (JP)
小川 護晃 (JP)
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