Title:
LASER CHIP PREPARATION METHOD, LASER CHIP, AND OPTICAL MODULE
Document Type and Number:
WIPO Patent Application WO/2023/231353
Kind Code:
A1
Abstract:
A laser chip (600) preparation method, a laser chip (600), and an optical module (200). The method comprises: growing, on a substrate layer (610) of an InP material, a substrate (620) comprising an aluminum indium gallium arsenide (AlInGaAs) quantum well structure; forming a SiO2 mask layer (630) on the upper surface of the substrate (620) by means of photoetching, and performing mask etching on the substrate (620) to obtain a mesa structure (640); performing in-situ CBr4 cleaning by using MOCVD, to grow a buried layer (650) along the mesa structure (640); growing a barrier layer (660) along the buried layer (650) by using the MOCVD; and then continuing the growth to obtain a laser chip (600) having a preset thickness. The etching surface of the mesa structure (640) can be protected by means of the buried layer (650), to prevent the outer surface of the mesa structure (640) from being oxidized by air, and reduce the difficulty of re-growth and facet coating in the subsequent process of obtaining the mesa structure (640); meanwhile, because the degree of oxidation of the outer surface of the mesa structure (640) by the air is low, a surface morphology can be improved, thereby ensuring the performance of the AlInGaAs quantum well laser chip (600).
Inventors:
ZHANG LIMING (CN)
Application Number:
PCT/CN2022/136843
Publication Date:
December 07, 2023
Filing Date:
December 06, 2022
Export Citation:
Assignee:
HISENSE BROADBAND MULTIMEDIA TECHNOLOGY CO LTD (CN)
International Classes:
H01S5/343; H01S5/02; H01S5/028; H01S5/34; H04B10/50
Foreign References:
| CN114937924A | 2022-08-23 | |||
| CN217182628U | 2022-08-12 | |||
| JP2004319760A | 2004-11-11 | |||
| JP2001217505A | 2001-08-10 | |||
| CN106877173A | 2017-06-20 | |||
| CN108649426A | 2018-10-12 | |||
| US20020043209A1 | 2002-04-18 |
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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