LASER PROCESSING METHOD - HAMAMATSU PHOTONICS KK

Title:

LASER PROCESSING METHOD

Document Type and Number:

WIPO Patent Application WO/2008/035610

Kind Code:

A1

Abstract:

Six rows of melting regions (131, 132) to be cut starting points are formed inside a silicon wafer (11) along a cut-planned line (5). At the time of forming the melting region (131) closest to the rear surface (21) of a processing object (1), a weakened region (18) is formed on the rear surface (21) along the cut-planned line (5). Since the melting regions (131, 132) are formed inside the silicon wafer (11), particles are prevented from being generated from the melting regions (131, 132). Furthermore, since the weakened region (18) having a prescribed depth is formed on the surface (21) of the processing object (1) along the cut-planned line (5), the processing object (1) can be cut along the cut-planned line (5) with a relatively small external force.

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Inventors:

SAKAMOTO TAKESHI (JP)

Application Number:

PCT/JP2007/067828

Publication Date:

March 27, 2008

Filing Date:

September 13, 2007

Export Citation:

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Assignee:

HAMAMATSU PHOTONICS KK (JP)
SAKAMOTO TAKESHI (JP)

International Classes:

B23K26/38; B23K26/40; H01L21/301; B23K101/40

Foreign References:

JP2004343008A	2004-12-02
JP2006068816A	2006-03-16
JP2006140355A	2006-06-01
JP2005057257A	2005-03-03
JP2006305586A	2006-11-09
JP2005123329A	2005-05-12

Other References: