Title:
LASER PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2012/014711
Kind Code:
A1
Abstract:
Disclosed is a laser processing method in which laser light (L) is focused inside a target object (1) formed from silicon, thereby forming a modified region (7), and etching is performed along the modified region (7), thereby forming a through-hole (24) in the target object (1). Said method includes: a laser-light focusing step in which laser light (L) is focused on the target object (1), thereby forming a modified region (7) along the part of the target object (1) that corresponds to the aforementioned through-hole (24); an etch-resistant-film generation step, after the laser-light focusing step, in which an etch-resistant film (22) which is resistant to etching is generated on an outer surface of the target object (1); and an etching treatment step, after the etch-resistant-film generation step, in which the target object (1) is etched, said etching being made to selectively progress along the modified region (7) to form the through-hole (24). In the laser-light focusing step, the modified region (7) is exposed to the outside surface of the target object (1).
Inventors:
SHIMOI HIDEKI (JP)
ARAKI KEISUKE (JP)
ARAKI KEISUKE (JP)
Application Number:
PCT/JP2011/066322
Publication Date:
February 02, 2012
Filing Date:
July 19, 2011
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
SHIMOI HIDEKI (JP)
ARAKI KEISUKE (JP)
SHIMOI HIDEKI (JP)
ARAKI KEISUKE (JP)
International Classes:
H01L21/306; B23K26/00; B23K26/382
Foreign References:
| JP2010142837A | 2010-07-01 | |||
| JP2009267247A | 2009-11-12 | |||
| JP2000246475A | 2000-09-12 | |||
| JP2004351494A | 2004-12-16 |
Other References:
See also references of EP 2600392A4
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
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Claims: