Title:
LATERAL PHOTOCURRENT METHOD FOR DIRECTLY MEASURING SHEET RESISTANCE OF CDS IN CU(IN, GA)SE2 ELEMENT UNDER ELEMENT OPERATION CONDITION
Document Type and Number:
WIPO Patent Application WO/2023/027299
Kind Code:
A1
Abstract:
The present invention relates to a lateral photocurrent method and, more specifically, to a lateral photocurrent method for directly measuring the sheet resistance of CdS in a Cu(In, Ga)Se2 element under an element operation condition. According to the present invention, the lateral photocurrent method for directly measuring the sheet resistance of CdS in a CIGS element under an element operation condition can measure the sheet resistance of CdS by using J-V data on a standard CIGS solar cell and a lateral photocurrent of a short-circuited custom-designed cell, and can measure the sheet resistance of the CdS by expanding to the CIGS solar cell and to Cu2ZnSnS4, SnS and Sb2Se3 solar cells.
More Like This:
Inventors:
CHUNG CHOONG-HEUI (KR)
Application Number:
PCT/KR2022/007653
Publication Date:
March 02, 2023
Filing Date:
May 30, 2022
Export Citation:
Assignee:
HANBAT NATIONAL UNIV INDUSTRYACADEMIC COOPERATION FOUNDATION (KR)
International Classes:
G01R31/378; G01R27/02; G01R27/08; G01R31/36; G01R31/392; G01R31/52; H01L31/0392
Domestic Patent References:
| WO2010144460A1 | 2010-12-16 |
Foreign References:
| KR20030076800A | 2003-09-29 | |||
| KR101472782B1 | 2014-12-15 | |||
| US20160204737A1 | 2016-07-14 | |||
| EP2053665A2 | 2009-04-29 |
Attorney, Agent or Firm:
LEE, Un Cheol (KR)
Download PDF: