Title:
LATERAL-TYPE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2012/107954
Kind Code:
A1
Abstract:
The present invention is a lateral-type semiconductor device configured on an SOI (silicon on insulator) substrate. The lateral-type semiconductor device is provided with a semiconductor layer that includes a body region (107) on a buried oxide film (200), and a drift region (109) adjacent to a side surface of the body region (107). The lateral-type semiconductor device is characterized in having a first trench that faces the buried oxide film (200) but does not reach the buried oxide film (200) at the interface between the body region (107) and the drift region (109).
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Inventors:
EGUCHI HIROOMI (JP)
OKAWA TAKASHI (JP)
ONOGI ATSUSHI (JP)
OKAWA TAKASHI (JP)
ONOGI ATSUSHI (JP)
Application Number:
PCT/JP2011/000696
Publication Date:
August 16, 2012
Filing Date:
February 08, 2011
Export Citation:
Assignee:
TOYOTA MOTOR CO LTD (JP)
EGUCHI HIROOMI (JP)
OKAWA TAKASHI (JP)
ONOGI ATSUSHI (JP)
EGUCHI HIROOMI (JP)
OKAWA TAKASHI (JP)
ONOGI ATSUSHI (JP)
International Classes:
H01L29/786
Foreign References:
| JP2004214701A | 2004-07-29 | |||
| JPH07135309A | 1995-05-23 | |||
| JP2009170671A | 2009-07-30 |
Other References:
See also references of EP 2674980A4
Attorney, Agent or Firm:
OGASAWARA PATENT OFFICE (JP)
Patent business corporation Ogasawara patent firm (JP)
Patent business corporation Ogasawara patent firm (JP)
Download PDF:
Claims:
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