Title:
LAYERED KZNSB, LAYERED ZNSB, KZNSB NANOSHEET, ZNSB NANOSHEET, AND PREPARATION METHODS THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/151644
Kind Code:
A1
Abstract:
The present invention relates to layered ZnSb, a ZnSb nanosheet, and preparation methods therefor. According to the present invention, a ZnSb nanosheet can be formed by efficiently releasing ZnSb, which is a polymorphic layered material having a structure different from that of a conventional three-dimensional ZnSb. A high-quality layered ZnSb nanosheet prepared by the process can be mass-produced so as to applicable to a thermoelectric material and the like. According to the present invention, a layered ZnSb structure can be prepared through K intercalation and deintercalation into/from a three-dimensional ZnSb structure, and a layered structure, having been newly manufactured, can be readily released.
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Inventors:
KIM SUNG-WNG (KR)
LEE KYU-HYOUNG (KR)
SONG JUN-SEONG (KR)
LEE KYU-HYOUNG (KR)
SONG JUN-SEONG (KR)
Application Number:
PCT/KR2018/016085
Publication Date:
August 08, 2019
Filing Date:
December 18, 2018
Export Citation:
Assignee:
RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV (KR)
International Classes:
C30B29/10; C30B29/68; C30B33/00; H01L35/14; H01L43/10
Foreign References:
| KR20170039851A | 2017-04-12 | |||
| KR20170039852A | 2017-04-12 | |||
| KR101403091B1 | 2014-07-01 | |||
| JP5910887B2 | 2016-05-11 |
Other References:
BENNETT, JOSEPH W. ET AL.: "Hexagonal ABC Semiconductors as Ferroelectrics", PHYSICAL REVIEW LETTERS, vol. 109, no. 16, 2012, pages 167602-1 - 167602-5, XP055629247
Attorney, Agent or Firm:
KIM, In-cheol (KR)
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